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Ferroelectric (FE) materials exhibit a characteristic transition temperature below which their broken inversion symmetry leads to a spontaneous electrical polarization. Because of their low cost and applicability to nonvolatile high-density data storage, FEs have been utilized for thin film memory devices. Often, the functionality of FE devices is compromised by charge conduction, i.e., leakage current, which is one of the technical bottlenecks for their practical application. However, remarkable electronic transport properties have been reported recently in FE domains and domain walls of various ferroelectrics, revealing intriguing interplay between electronic properties and FE polarization. We have done some pioneering work on revealing intriguing conduction properties of domains and domain walls in some of the interesting ferroelectric materials using conductive-tip atomic force microscopy (c-AFM). [1-3] Building on previous work, this research project will explore nanoscale conduction properties in other interesting materials that have potential impacts on fundamental science and technological applications.
[1] Phys. Rev. Lett., 108, 077203 (2012).
[2] Phys. Rev. Lett., 104, 217601 (2010).
[3] Nature Material, 9, 253 (2010).
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